Display Device

ABSTRACT

Disclosed is a display device. The display device includes a substrate having an active area and a non-active area, a thin film transistor arranged on the active area of the substrate, at least two planarization layers arranged on the thin film transistor, signal links arranged on the non-active area of the substrate, and an outer cover layer spaced apart from the at least two planarization layers and configured to overlap upper and side surfaces of the signal links, thus preventing or reducing damage to the signal links.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.17/220,523 filed Apr. 1, 2021 which is a divisional of U.S. patentapplication Ser. No. 16/533,698 filed on Aug. 6, 2019 which claims thebenefit of Republic of Korea Patent Application No. 10-2018-0108411,filed on Sep. 11, 2018, each of which is incorporated by reference inits entirety.

BACKGROUND Field of Technology

The present disclosure relates to a display device, and moreparticularly, to a display device having high definition and highresolution.

Discussion of the Related Art

Image display devices, which display various pieces of information on ascreen, are a core technology in the age of information andcommunication and have been developed to satisfy thinness, light-weight,portability and high-performance trends. Therefore, an organic lightemitting diode (OLED) display, which can reduce weight and volume tomake up for drawbacks of a cathode ray tube (CRT), is now in thespotlight. Such an organic light emitting diode display is aself-luminous device and has advantages, such as low power consumption,high response speed, high luminous efficacy, high brightness and wideviewing angle. Such an organic light emitting diode display implementsan image through a plurality of subpixels arranged in a matrix. Each ofthe subpixels includes a light emitting element, and a pixel circuitincluding a plurality of transistors to independently drive the lightemitting element.

As the organic light emitting diode display is developed to have highdefinition and high resolution, load applied to respective signal linesand respective electrodes is greatly increased and thusresistor-capacitor (RC) delay exerting a negative influence on imagequality and driving characteristics is gradually increased.Particularly, signal delay due to RC load between the light emittingelement and the transistor occurs and may thus cause difficulty inapplying a driving signal to each subpixel.

SUMMARY

Accordingly, the present disclosure is directed to a display device thatsubstantially obviates one or more problems due to limitations anddisadvantages of the related art.

An object of the present disclosure is to provide a display devicehaving high definition and high resolution.

Additional advantages, objects, and features of the disclosure will beset forth in part in the description which follows and in part willbecome apparent to those having ordinary skill in the art uponexamination of the following. The objectives and other advantages may berealized and attained by the structure particularly pointed out in thewritten description and claims hereof as well as the appended drawings.

To achieve these objects and other advantages and in accordance with thepurpose of the disclosure, as embodied and broadly described herein, adisplay device includes a substrate having an active area and anon-active area, a thin film transistor arranged on the active area ofthe substrate, at least two planarization layers arranged on the thinfilm transistor, signal links arranged on the non-active area of thesubstrate, and a first outer cover layer configured to overlap upper andside surfaces of the signal links, thus realizing high definition andhigh resolution and preventing damage to the signal links and aprotective film on the signal links.

In some embodiments, the first outer cover layer is spaced apart fromthe at least two planarization layers. In some embodiments, the at leasttwo planarization layers include a first and second planarization layer.The first planarization layer is arranged on a protective film and isconfigured to cover the thin film transistor. The second planarizationlayer is arranged on the first planarization layer. In some embodiments,the display device includes a pixel connection electrode that isconnected to a drain electrode of the thin film transistor and arrangedbetween the first and second planarization layers. In some embodiments,the pixel connection electrode is formed of a material which is a samematerial as the drain electrode.

In some embodiments, the signal links include a lower link and an upperlink. The lower link is formed of a same material as a gate electrode ofthe thin film transistor and is coplanar with the gate electrode. Theupper link is formed of a same material as a source electrode and thedrain electrode of the thin film transistor. The upper link is coplanarwith the source electrode and the drain electrode and is connected tothe lower link. The first outer cover layer is formed of the samematerial as the first planarization layer and is arranged on theprotective film. The protective film is arranged on the upper link. Insome embodiments, the display device includes at least one link contacthole in an interlayer insulating film arranged between the source anddrain electrodes and the gate electrode. The link contact hole exposesthe lower link. The upper link is connected to the lower link throughthe at least one link contact hole. The first outer cover layer overlapsthe at least one link contact hole.

In some embodiments, the display device includes conductive pads, alight emitting element, an encapsulation unit, at least one dam, and asecond outer cover layer. conductive pads connected to the signal links.The light emitting element is connected to the thin film transistor. Theencapsulation unit is arranged on the light emitting element. The atleast one dam is arranged between the conductive pads and the lightemitting element. The second outer cover layer is arranged between theat least one dam and the conductive pads. In some embodiments, theencapsulation unit includes first and second inorganic encapsulationlayers formed of an inorganic insulating material, and an organicencapsulation layer. In some embodiments, the second outer cover layeris formed on the signal links to have a greater line width than that ofthe signal links. In some embodiments, the signal links are formed of asame material as a source electrode and the drain electrode of the thinfilm transistor, and the second outer cover layer is formed of a samematerial as the pixel connection electrode so as to be in a same layeras the pixel connection electrode. In some embodiments, the displaydevice includes a third outer cover layer that is formed on the secondouter cover layer and has a greater line width than that of the secondouter cover layer. The third outer cover layer is formed of a samematerial as the second planarization layer.

In some embodiments, the display device includes high voltage supplylines including first and second high voltage supply lines connectedthrough line contact holes passing through the protective film and thefirst planarization layer. In some embodiments, the display deviceincludes a pixel connection electrode arranged between the first andsecond planarization layers. The first high voltage supply line isformed of a same material as source and drain electrodes of the thinfilm transistor so as to be coplanar with the source and drainelectrodes, and the second high voltage supply line is formed of a samematerial as the pixel connection electrode so as to be coplanar with thepixel connection electrode.

In some embodiments, the first outer cover layer includes a plurality offirst outer cover layer portions corresponding to a plurality of signallinks in the signal links respectively. In some embodiments, each of theplurality of first outer cover layer portions has a flat upper surfaceor a stepwise upper surface on the signal links.

In still other embodiments, a display device includes a substrate, athin film transistor, a conductive pad, a first link, a second link, andfirst outer cover layer. The substrate has an active area and anon-active area. The thin film transistor is in the active area of thesubstrate. The conductive pad is in the non-active area of thesubstrate. The first link is electrically connected to the conductivepad is in the non-active area of the substrate. The second link has afirst end electrically connected to an electrode of the thin filmtransistor in the active area of the substrate and has a second endelectrically connected to the first link in the non-active area of thesubstrate. The first outer cover layer covers a top and one or moresides of a signal link region where the first link and the second linkoverlap from a plan view of the substrate.

In some embodiments, the first link is in a first layer and the secondlink is in a second layer on the substrate.

In some embodiments, the display device includes an interlayerinsulating film between the first link and the second link. The firstlink and the second link are electrically connected through a hole inthe interlayer insulating film.

In some embodiments, the first link has a first width, the second linkhas a second width greater than the first width in the signal linkregion where the first link and the second link overlap, and the firstouter cover layer has a third width greater than the second width.

In some embodiments, the first link is formed of a same material and ina same layer as a gate electrode of the thin film transistor and thesecond link is formed of a same material and in a same layer as a sourceelectrode and a drain electrode of the thin film transistor.

In some embodiments, the display device includes a planarization layerthat covers the thin film transistor. The first outer cover layer isformed of a same material as the planarization layer.

In some embodiments, the display device includes a first planarizationand a pixel connection electrode. The first planarization layer coversthe thin film transistor. The pixel connection electrode is electricallyconnected to a drain electrode of the thin film transistor through ahole in the first planarization layer. The first outer cover layer isformed of a same material as the pixel connection electrode. In someembodiments, the substrate includes a second planarization layer and asecond outer cover layer. The second planarization layer covers thepixel connection electrode and the first planarization layer. The secondouter cover layer covers top and side surfaces of the of the first outercover layer. The second outer cover layer is formed of a same materialas the second planarization layer.

In some embodiments, the display device includes a light emittingelement, an encapsulation unit, and at least one dam. The light emittingelement is in the active area and is connected to the thin filmtransistor. The encapsulation unit is arranged on the light emittingelement. The at least one dam is arranged between the conductive pad andthe light emitting element. The second outer cover layer is arrangedbetween the at least one dam and the conductive pad.

It is to be understood that both the foregoing general description andthe following detailed description of the present disclosure areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosure and are incorporated in and constitute apart of this application, illustrate embodiment(s) of the disclosure andtogether with the description serve to explain the principle of thedisclosure. In the drawings:

FIG. 1 is a plan view illustrating an organic light emitting diodedisplay in accordance with one embodiment;

FIGS. 2A and 2B are cross-sectional views illustrating the organic lightemitting diode display of FIG. 1 , taken along line I-I′ and line II-II′in accordance with some embodiments;

FIG. 3 is a plan view illustrating an organic light emitting diodedisplay having an outer cover layer differing from that of the lightemitting diode display shown in FIG. 1 in accordance with oneembodiment;

FIGS. 4A and 4B are cross-sectional views illustrating the organic lightemitting diode display of FIG. 3 , taken along line in accordance withsome embodiments;

FIGS. 5A and 5B are cross-sectional views illustrating an organic lightemitting diode display having no outer cover layer according to acomparative example in accordance with some embodiments;

FIGS. 6A and 6B are cross-sectional views illustrating an organic lightemitting diode display having an outer cover layer in accordance withsome embodiments;

FIG. 7 is a plan view illustrating an organic light emitting diodedisplay in accordance with an embodiment; and

FIG. 8 is a cross-sectional view illustrating the organic light emittingdiode display of FIG. 7 , taken along line IV-IV′ in accordance with anembodiment.

DETAILED DESCRIPTION

Reference will now be made in detail to the preferred embodiments,examples of which are illustrated in the accompanying drawings.

FIG. 1 is a plan view illustrating an organic light emitting diodedisplay in accordance with one embodiment, and FIGS. 2A and 2B arecross-sectional views illustrating the organic light emitting diodedisplay of FIG. 1 , taken along line I-I′ and line II-I′.

The organic light emitting diode display shown in FIG. 1 and FIGS. 2Aand 2B is divided into an active area AA, and a non-active area NAarranged at the perimeter of the active area AA.

A plurality of subpixels is arranged in a matrix in the active area AAto display an image. Each subpixel includes a pixel driving circuit anda light emitting element 130 connected to the pixel driving circuit.

The pixel driving circuit includes a switching transistor TS, a drivingtransistor TD and a storage capacitor Cst (not shown). The pixel drivingcircuit having a structure including two transistors TS and TD and onecapacitor C is exemplarily described, without being limited thereto.

The switching transistor Ts is turned on when a scan pulse is suppliedto s scan line SL, and thus supplies a data signal supplied to a dataline DL to the storage capacitor Cst and a gate electrode 102 of thedriving transistor TD. For this purpose, the switching transistor TSincludes, as exemplarily shown in FIG. 1 , a gate electrode GE connectedto the scan line SL, a source electrode SE connected to the data lineDL, a drain electrode DE connected to the driving transistor TD, and asemiconductor layer ACT forming a channel between the source electrodeSE and the drain electrode DE.

The driving transistor TD controls current supplied from high voltage(VDD) supply lines VL to the light emitting element 130 in response to adata signal supplied to the gate electrode 102 of the driving transistorTD, thus adjusting an amount of light emitted from the light emittingelement 130. Further, even if the switching transistor TS is turned off,the driving transistor TD supplies constant current by voltage chargingthe storage capacitor Cst until a data signal of a next frame issupplied and, thus, the light emitting element 130 maintains lightemission.

For this purpose, the driving transistor TD includes, as exemplarilyshown in FIG. 1 and FIGS. 2A and 2B, a semiconductor layer 104 arrangedon an active buffer layer 114, the gate electrode 102 overlapping thesemiconductor layer 104 with a gate insulating film 112 disposedtherebetween, and source and drain electrodes 106 and 108 formed on aninterlayer insulating film 116 and contacting the semiconductor layer104. In other words, it may be said that overlapping may refer to twoelements occupying at least partially the same space in a plan view. Itmay be said that overlapping does not require direct physical contactbetween the two elements.

The semiconductor layer 104 is formed of at least one of an amorphoussemiconductor material, a polycrystalline semiconductor material or anoxide semiconductor material. The semiconductor layer 104 is formed onthe active buffer layer 114. The semiconductor layer 104 includes achannel region, a source region and a drain region. The channel regionoverlaps the gate electrode 102 with the gate insulating film 112disposed therebetween and is formed between the source electrode 106 andthe drain electrode 108. The source region is conductively connected tothe source electrode 106 through a source contact hole 110S passingthrough the gate insulating film 112 and the interlayer insulating film116. The drain region is conductively connected to the drain electrode108 through a drain contact hole 110D passing through the gateinsulating film 112 and the interlayer insulating film 116. Amulti-buffer layer 140 and the active buffer layer 114 are arrangedbetween the semiconductor layer 104 and a substrate 101. Themulti-buffer layer 140 delays diffusion of moisture and/or oxygenpermeating the substrate 101. The active buffer layer 114 functions toprotect the semiconductor layer 104 and to block various kinds ofdefects introduced from the substrate 101.

Here, the uppermost layer of the multi-buffer layer 140 contacting theactive buffer layer 114 is formed of a material having different etchingcharacteristics from the remaining layers of the multi-buffer layer 140,the active buffer layer 114, the gate insulating film 112 and theinterlayer insulating film 116. The uppermost layer of the multi-bufferlayer 140 contacting the active buffer layer 114 is formed of one ofSiN_(x) and SiO_(x), and the remaining layers of the multi-buffer layer140, the active buffer layer 114, the gate insulating film 112 and theinterlayer insulating film 116 are formed of the other of SiN_(x) andSiO_(x). For example, the uppermost layer of the multi-buffer layer 140contacting the active buffer layer 114 is formed of SiN_(x), and theremaining layers of the multi-buffer layer 140, the active buffer layer114, the gate insulating film 112 and the interlayer insulating film 116are formed of SiO_(x).

The gate electrode 102 is formed on the gate insulating film 112, andoverlaps the channel region of the semiconductor layer 104 with the gateinsulating film 112 interposed therebetween. The gate electrode 102 isformed of a first conductive material having a single layer ormultilayer structure using one selected from the group consisting ofmolybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti),nickel (Ni), neodymium (Nd) and copper (Cu), or an alloy thereof.

The source electrode 106 is connected to the source region of thesemiconductor layer 104 exposed through the source contact hole 110Spassing through the gate insulting film 112 and the interlayerinsulating film 116. The drain electrode 108 is disposed opposite to thesource electrode 106 and is connected to the drain region of thesemiconductor layer 104 through the drain contact hole 110D passingthrough the gate insulating film 112 and the interlayer insulating film116. The source and drain electrodes 106 and 108 are formed of a secondconductive material having a single layer or multilayer structure usingone selected from the group consisting of molybdenum (Mo), aluminum(Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd)and copper (Cu), or an alloy thereof.

A pixel connection electrode 142 is arranged between first and secondplanarization layers 128 and 148. The pixel connection electrode 142 isexposed through a first pixel contact hole 100 passing through aprotective film 118 and the first planarization layer 128, and isconnected to the drain electrode 108. The pixel connection electrode 142is formed of a material having a low specific resistance which is thesame as or similar to the drain electrode 108. In other words, it may besaid that a material having a low specific resistance refers to amaterial having a low resistivity. Herein it may be said that, amaterial having a low specific resistance may be a metal.

The high voltage supply lines VL disposed in parallel with the data lineDL include first and second high voltage supply lines VL1 and VL2connected through line contact holes 180 passing through the protectivefilm 118 and the first planarization layer 128. The first high voltagesupply line VL1 is formed of the same material as the source and drainelectrodes 106 and 108 of the driving transistor TD so as to be coplanar(e.g., in a same layer) with the source and drain electrodes 106 and108, and the second high voltage supply line VL2 is formed of the samematerial as the pixel connection electrode 142 so as to be coplanar withthe pixel connection electrode 142. For example, the second high voltagesupply line VL2 and the pixel connection electrode 142 are formed of aconductive material having a single layer or multilayer structure usingone selected from the group consisting of molybdenum (Mo), aluminum(Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd)and copper (Cu), or an alloy thereof. The conductive material may bereferred to as the third conductive material herein.

As such, the high voltage supply lines VL of the include the first andsecond high voltage supply lines VL1 and VL2 which are conductivelyconnected through the line contact holes 180, and thus, resistance ofthe high voltage supply lines VL may be reduced and an RC time constantmay be reduced. Accordingly, delay of transmission of high voltage (VDD)from the high voltage supply lines VL to the source electrode 106 of thedriving transistor TD may be prevented and thus high definition and highresolution may be realized.

The light emitting element 130 includes an anode 132, at least one lightemitting stack 134 formed on the anode 132, and a cathode 136 formed onthe at least one light emitting stack 134.

The anode 132 is conductively connected to the pixel connectionelectrode 142 exposed through a second pixel contact hole 120 passingthrough the second planarization layer 148 arranged on the firstplanarization layer 128.

The anodes 132 of the respective subpixels are formed to be exposed by abank 138. Such a bank 138 may be formed of an opaque material (forexample, a black-colored material) so as to prevent optical coherencebetween adjacent subpixels. In this case, the bank 138 includes alight-shielding material formed of at least one selected from the groupconsisting of a color pigment, an organic black pigment and carbon.

The at least one light emitting stack 134 is formed on the anode 132 ina light emitting area prepared by the bank 138. The at least one lightemitting stack 134 is formed by stacking a hole-related layer, anorganic light emitting layer and an electron-related layer on the anode132 in regular order or in reverse order. Otherwise, the at least onelight emitting stack 134 may include first and second light emittingstacks disposed opposite to each other with a charge generation layerinterposed therebetween. In this case, an organic light emitting layerof one of the first and second light emitting stacks generates bluelight, an organic light emitting layer of the other of the first andsecond light emitting stacks generates yellow-green light and, thus,white light is generated through the first and second light emittingstacks. White light generated by the at least one light emitting stack134 is incident upon color filters (not shown) located on or under theat least one light emitting stack 134, thus implementing a color image.Otherwise, without separate color filters, each light emitting stack 134may generate color light corresponding to each subpixel, thusimplementing a color image. That is, the light emitting stack 134 of thered (R) subpixel may generate red light, the light emitting stack 134 ofthe green (G) subpixel may generate green light, and the light emittingstack 134 of the blue (B) subpixel may generate blue light.

The cathode 136 is formed opposite to the anode 132 with the at leastone light emitting stack 134 disposed therebetween and is connected tolow voltage (VSS) supply lines.

Data pads DP connected to the data lines DL, scan pads SP connected tothe scan lines SL, and power pads (not shown) connected to the lowvoltage (VSS) supply lines and the high voltage (VDD) supply lines arearranged in the non-active area NA. The data pads DP, the scan pads SPand the power pads may be arranged in the non-active area NA arranged atany one of one side and the other side of the substrate 101, or the datapads DP, the scan pads SP and the power pads may be arranged in thenon-active area NA arranged at different regions of the substrate 101.Arrangement of the data pads DP, the scan pads SP and the power pads isnot limited to the structure shown in FIG. 1 , and may be variouslymodified according to design specifications of the display.

At least one conductive pad of the data pads DP, the scan pads SP or thepower pads is connected to the corresponding signal line through asignal link. The signal link may include a lower link 122 and an upperlink 124, as exemplarily shown in FIGS. 1, 2A, and 2B. The signal linkmay be referred to herein as a “signal link region.” The signal link mayinclude a region where the lower link 122 and the upper link 124 overlapfrom a plan view of the substrate 101.

The lower link 122 extends from one of the conductive pad and the signalline, and the upper link 124 extends from the other of the conductivepad and the signal line.

The lower link 122 is exposed through at least one link contact hole 126passing through at least one interlayer insulating film 116 arrangedbetween the source and drain electrodes 106 and 108 and the gateelectrode 102, and is connected to the upper link 124. The lower link122 is formed of the same material as the gate electrode 102 of thedriving transistor TD so as to be coplanar with the gate electrode 102(for example, to be arranged on the gate insulating film 112), and theupper link 124 is formed of the same material as the source and drainelectrodes 106 and 108 of the driving transistor TD so as to be coplanarwith the source and drain electrodes 106 and 108 (for example, to bearranged on the interlayer insulating film 116).

The protective film 118 formed of an inorganic insulating material isarranged on the upper link 124, and an outer cover layer 146 (may bereferred to herein as the first outer cover layer) formed of the sameorganic insulating material as the first planarization layer 128 isarranged on the protective film 118.

The outer cover layer 146 formed of the organic insulating material isformed to be spaced apart from the first and second planarization layers128 and 148. In other words, it may be said that ‘spaced apart from’ mayrefer to an arrangement where the two components are arranged such thatthey are not in physical contact. Therefore, inflow of moisture oroxygen from the outside into the light emitting element 130 through theouter cover layer 146 and the first and second planarization layers 128and 148 is prevented, and thus damage to the light emitting element 130may be prevented.

The outer cover layer 146 may be formed to correspond to a plurality ofsignal links arranged on the substrate 101 one-to-many (in other words,it may be said that one outer cover layer corresponds to more than onesignal link), as exemplarily shown in FIG. 1 , or be formed tocorrespond to signal links one-to-one (in other words, it may be saidthat one outer cover layer corresponds to one signal link), asexemplarily shown in FIG. 3 and FIGS. 4A and 4B. In some embodiments asignal link refers to a conductive path between two components of thedisplay device.

The outer cover layer 146 may be formed to have a flat upper surface onthe upper link 124, as exemplarily shown in FIG. 4A, or be formed tohave a stepwise upper surface so that the thickness of the outer coverlayer 146 is decreased in a direction to the edge thereof, asexemplarily shown in FIG. 4B. The outer cover layer 146 having thestepwise upper surface may prevent a defect of the outer cover layer 146caused by generation of stepped portions during a subsequent process ofthe outer cover layer 146.

The outer cover layer 146 is formed to overlap not only the link contactholes 126 but also the upper surface and the side surface of the upperlink 124. Particularly, the outer cover layer 146 is formed on theprotective film 118 covering stepped portions generated by the linkcontact holes 126 and stepped portions generated by the side surfaces ofthe upper links 124 so as to overlap the link contact holes 126.

Therefore, embodiments may prevent loss of the protective film 118 anddamage to the upper links 124 during a subsequent process of the firstplanarization layer 128. This will be described in detail with referenceto FIGS. 5A and 5B and FIGS. 6A and 6B.

FIGS. 5A and 5B are cross-sectional views illustrating an organic lightemitting diode display having no outer cover layer according to acomparative example, and FIGS. 6A and 6B are cross-sectional viewsillustrating an organic light emitting diode display having an outercover layer according to an example.

In the comparative example shown in FIGS. 5A and 5B, after lower links122, an interlayer insulating film 116, upper links 124, a protectivefilm 118 and a first planarization layer 128 are sequentially formed, apixel connection electrode 142 is formed in an active area. Here, duringa dry etching process for forming the pixel connection electrode 142, aportion of the protective film 118 corresponding to a stepped portiongenerated by a link contact hole 126 can be removed. And, the upper link124 can be exposed through the removed portion of the protective film118 (region A). The exposed upper link 124 causes short-circuit with aconductive material of at least one of an anode 132 or a cathode 136formed after formation of the pixel connection electrode 142.

Further, during a dry etching process for forming at least one of thepixel connection electrode 142 or the anode 132, if the protective film118 is lost (region B), the upper link 124 under the protective film 118can be released or damaged. In this case, a contact defect between thelower link 122 and the upper link 124 occurs, and the material releasedfrom the upper link 124 can be moved to the active area by a wet etchingsolution during the etching process of the anode 132. And, a defect offoreign substances can be occurred by the released material moved to theactive area.

Moreover, during the dry etching process for forming the pixelconnection electrode 142, a tip including a residue material 142A of thepixel connection electrode 142 (region C) may be generated around theupper link 124 (referred to as a tip defect). The residue material 142Aof the pixel connection electrode 142 can be moved to the active area bythe etching solution during the wet etching process of the anode 132.And a defect of foreign substances can be occurred by the residuematerial 142A moved to the active area.

In contrast, in the example shown in FIGS. 6A and 6B, after lower links122, an interlayer insulating film 116, upper links 124 and a protectivefilm 118 are sequentially formed, a first planarization layer 128 and anouter cover layer 146 are simultaneously formed. Thereafter, a pixelconnection electrode 142 is formed in an active area. During a dryetching process for forming the pixel connection electrode 142, theouter cover layer 146 covers the protective film 118 on the upper links124. The outer cover layer 146 covers the protective film 118 at astepped portion generated by a link contact hole 126 during the dryetching process for forming the pixel connection electrode 142.Therefore, loss of the protective film 118 and exposure of the upperlinks 124 during the dry etching process for forming the pixelconnection electrode 142 may be prevented or reduced. Accordingly,short-circuit between the upper link 124 and a conductive material of atleast one of an anode 132 or a cathode 136, a contact defect between theupper link 124 and a lower link 122, and a defect due to foreignsubstances, caused by a conductive material of at least one of the upperlink 124 or the pixel connection electrode 142, may be prevented orreduced.

FIG. 7 is a plan view illustrating an organic light emitting diodedisplay in accordance with another embodiment, and FIG. 8 is across-sectional view illustrating the organic light emitting diodedisplay of FIG. 7 , taken along line IV-IV′.

The display shown in FIGS. 7 and 8 includes the same elements as thedisplay shown in FIGS. 1 and 2 except that the display shown in FIGS. 7and 8 further includes an encapsulation unit 150, a plurality of dams158 and a second outer cover layer 164. Therefore, a detail descriptionof the elements of the organic light emitting diode display inaccordance with this embodiment, which are the same as those of theorganic light emitting diode display in accordance with the formerembodiment, will be omitted.

The encapsulation unit 150 prevents or reduces external moisture oroxygen from permeating the light emitting elements 130, which arevulnerable to external moisture or oxygen. For this purpose, theencapsulation unit 150 includes at least one inorganic encapsulationlayer and at least one organic encapsulation layer. In some embodiments,the encapsulation unit 150 having a structure in which a first inorganicencapsulation layer 152, an organic encapsulation layer 154 and a secondinorganic encapsulation layer 156 are sequentially stacked will beexemplarily described.

The first inorganic encapsulation layer 152 is formed on a substrate 101provided with a cathode 136 formed thereon. The second inorganicencapsulation layer 156 is formed on the substrate 101 provided with theorganic encapsulation layer 154 formed thereon, and the first inorganicencapsulation layer 152 and the second inorganic encapsulation layer 156are formed to surround the upper, lower and side surfaces of the organicencapsulation layer 154. The first and second inorganic encapsulationlayers 152 and 156 minimize or block permeation of external moisture oroxygen into a light emitting stack 134. The first and second inorganicencapsulation layers 152 and 156 are formed of an inorganic insulatingmaterial which may be deposited at a low temperature, such as siliconnitride (SiN_(x)), silicon oxide (SiO_(x)), silicon oxynitride (SiON) oraluminum oxide (Al₂O₃). Therefore, since the first and second inorganicencapsulation layers 152 and 156 are deposited in a low-temperatureatmosphere, damage to the light emitting stack 134, which is vulnerableto a high-temperature atmosphere, during a deposition process of thefirst and second inorganic encapsulation layers 152 and 156 may beprevented or reduced.

The organic encapsulation layer 154 serves as a buffer to damp stressbetween respective layers according to bending of the organic lightemitting diode display, and strengthens planarization performance of theorganic light emitting diode display. The organic encapsulation layer154 is formed of a non-photosensitive organic insulating material, suchas polycaprolactone (PCL), acrylic resin, epoxy resin, polyimide,polyethylene or silicon oxycarbide (SiOC), or a photosensitive organicinsulating material, such as photoacryl, on the substrate 101 providedwith the first inorganic encapsulation layer 152 formed thereon. If theorganic encapsulation layer 154 is formed through an inkjet method, thedams 158 are arranged so as to prevent or reduce the organicencapsulation layer 154 in a liquid state from diffusing into the edgeof the substrate 101. The dams 158 are arranged more closely to the edgeof the substrate 101 than the organic encapsulation layer 154. The dams158 may prevent or reduce the organic encapsulation layer 154 fromdiffusing to a pad region in which conductive pads arranged in theoutermost region of the substrate 101 are arranged.

The second outer cover layer 164 may be arranged in a region which maynot be covered by the outer cover layer 146 shown in FIGS. 1 and 2 . Forexample, the second outer cover layer 164 is arranged in a regionbetween the dams 158 and the conductive pads SP and DP, in which a thinfilm formed of an organic insulating material (e.g., usable as a movingpath of external moisture or oxygen) may not be arranged. In someembodiments, the second outer cover layer 164 is formed instead of theouter cover layer 146. In other embodiments, the second outer coverlayer 164 is formed in addition to the outer cover layer 146.

The second outer cover layer 164 is formed through the same mask processas the pixel connection electrode 142. That is, the second outer coverlayer 164 may be formed of the third conductive material (e.g., the samematerial as the pixel connection electrode 142) on the protective film118 so as to be coplanar with the pixel connection electrode 142. Thesecond outer cover layer 164 is arranged on signal links 162 formed of asecond conductive material (e.g., the same material as source and drainelectrodes 106 and 108). The signal links 162 may be a single line thatelectrically connects a conductive pad (e.g., a data pad) to acorresponding signal line. The second outer cover layer 164 has a linewidth w2 that is greater than a line width w1 of the signal links 162.Because the second outer cover layer 164 has a wider line width than thesignal links 162, the second outer cover layer 164 covers the upper andside surfaces of the signal links 162. Since the protective film 118 maybe arranged over the signal links 162, the second outer cover layer 164may also be arranged over the protective film 118. Accordingly, duringan etching process for forming the second outer cover layer 164 and thepixel connection electrode 142, the third conductive material of thesecond outer cover layer 164 covers the protective film 118 on thesignal links 162. Therefore, embodiments may prevent or reduce the lossof the protective film 118 arranged on the signal links 162, damage tothe signal links 162, and tip defects of the third conductive material.

A third outer cover layer 166 formed of the same material as a secondplanarization layer 148 is arranged on the second outer cover layer 164.The third outer cover layer 166 has a greater line width than the linewidth w2 of the second outer cover layer 164 so as to cover the side andupper surfaces of the second outer cover layer 164. Such a third outercover layer 166 is formed to have a thickness less than that of thesecond planarization layer 148, and thus, generation of stepped portionsdue to the third outer cover layer 166 may be reduced. Accordingly,during a process of pressing a signal transmission film (for example, aflexible printed circuit (FPC) or a tape carrier package (TCP)) to theconductive pads adjacent to the third outer cover layer 166, a pressingprocess defect due to a thickness of the third outer cover layer 166 maybe prevented or reduced.

Although the former embodiment exemplarily describes the structureincluding the outer cover layer 146 and the latter embodimentexemplarily describes the structure including the second and third coverlayers 164 and 166, yet another embodiment may describe a structureincluding both the outer cover layer 146 and the second and third coverlayers 164 and 166.

Further, the present disclosure exemplarily describes the structure, inwhich the outer cover layer 146 is arranged on the signal links 122 and124 having the link contact holes 126, and the second and third outercover layers 164 and 166 are arranged on the signal links 162 having nolink contact holes 126, but the disclosure is not limited thereto. Thesecond and third outer cover layers 164 and 166 may be arranged on thesignal links 122 and 124 having the link contact holes 126, and theouter cover layer 146 may be arranged on the signal links 162 having nolink contact holes 126.

Also, although the present disclosure exemplarily describes thestructure in which the outer cover layer 146 and the second and thirdouter cover layers 164 and 166 are arranged on the signal links 122, 124and 162 connected to the data pads DP, the outer cover layer 146 and thesecond and third outer cover layers 164 and 166 may be arranged onsignal links connected to the scan pads SP and/or the power pads.

Moreover, although the present disclosure exemplarily describes theorganic light emitting diode display, the disclosure may be applied toall display devices including thin film transistors.

As apparent from the above description, in a display device inaccordance with the present disclosure, a drain electrode of a thin filmtransistor is connected to an anode of a light emitting element througha pixel connection electrode formed of a material having a low specificresistance. Therefore, the display device in accordance with the presentdisclosure may reduce signal delay due to RC load between the lightemitting element and the thin film transistor and thus realize highdefinition and high resolution.

Further, the display device in accordance with the present disclosureincludes an outer cover layer overlapping a stepped portion generated bythe side surface of a signal link and a stepped portion generated by alink contact hole interconnecting the signal links. Therefore, thedisplay device in accordance with the present disclosure may prevent orreduce the loss of a protective film covering the signal links, releaseof the signal links, and tip defects of the third conductive materialduring an etching process for forming the pixel connection electrode.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present disclosurewithout departing from the spirit or scope of the invention. Thus, it isintended that the present disclosure cover the modifications andvariations provided they come within the scope of the appended claimsand their equivalents.

What is claimed is:
 1. A display device comprising: a substrate havingan active area and a non-active area; a thin film transistor in theactive area of the substrate; a first planarization layer that coversthe thin film transistor; a pixel connection electrode on the firstplanarization layer, the pixel connection electrode connected to thethin film transistor; an anode electrode connected to the pixelconnection electrode; a light emitting stack on the anode electrode; acathode electrode on the light emitting stack; an encapsulation partarranged on the light emitting stack, the encapsulation part including:a first inorganic encapsulation layer, a second inorganic encapsulationlayer, an organic encapsulation layer between the first inorganicencapsulation layer and the second inorganic encapsulation layer, andformed through an ink jet method, a conductive pad in the non-activearea of the substrate; a first link electrically connected to theconductive pad in the non-active area of the substrate; a second linkoverlapping the first link in a signal link region and connected to thethin film transistor in the active area of the substrate; a first outercover layer covering a top and one or more sides of the signal linkregion; at least one dam arranged between the conductive pad and thelight emitting stack; wherein the first outer cover layer comprises asame material as the first planarization layer, wherein the first outercover layer is spaced apart from the first planarization layer, andwherein the second link overlaps the at least one dam.
 2. The displaydevice of claim 1, wherein the first outer cover layer fully covers thefirst link and the second link in the signal link region.
 3. The displaydevice of claim 1, wherein the first inorganic film and the secondinorganic film cover the at least one dam while being in contact witheach other, and the organic film is confined by the at least one dam. 4.The display device of claim 1, wherein the first link is in a firstlayer and the second link is in a second layer on the first layer. 5.The display device of claim 1, further comprising: an interlayerinsulating film between the first link and the second link, and whereinthe first link and the second link are electrically connected through ahole in the interlayer insulating film.
 6. The display device of claim1, wherein: the first link has a first width, the second link has asecond width that is greater than the first width in the signal linkregion, and the first outer cover layer has a third width that isgreater than the second width.
 7. The display device of claim 1,wherein: the first link comprises a same material and is in a same layeras a gate electrode of the thin film transistor, and the second linkcomprises a same material and in a same layer as a source electrode anda drain electrode of the thin film transistor.
 8. The display device ofclaim 1, wherein each of the second link, the source electrode, and adrain electrode of the thin film transistor includes a multi-layercomprising an alloy of titanium, aluminum, titanium.
 9. The displaydevice of claim 1, wherein the pixel connection electrode iselectrically connected to a drain electrode of the thin film transistorthrough a hole in the first planarization layer.
 10. The display deviceof claim 1, wherein further comprising: a second planarization layerthat covers the pixel connection electrode and the first planarizationlayer; and a second outer cover layer that covers top and side surfacesof the first outer cover layer, wherein the second outer cover layer isformed of a same material as the second planarization layer.